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 Preliminary 0
Typical Applications
RF5824
3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE
* IEEE802.11a/b/g and IEEE802.11n WLAN * 2.5GHz and 5GHz ISM Bands Applications Applications * Single-Chip RF Power Amplifier Module Product Description
4.00 0.10
* Wireless LAN Systems * Portable Battery-Powered Equipment
The RF5824 is a linear, medium-power, high-efficiency dual-band power amplifier module designed specifically for battery-operated WLAN applications such as PC cards, mini-PCI and compact flash applications. It is also designed to meet IEEE802.11a/b/g, IEEE802.11n, FCC, and ETSI requirements for operation within the 2.4GHz to 2.5GHz and 4.90GHz to 5.85GHz bands. The device is manufactured on an advanced InGaP GaAs Heterojunction Bipolar Transistor process, and has been designed for use as the final RF amplifier in both the 2GHz and 5GHz WLAN and other spread-spectrum transmitters. The device is packaged in a QFN, 24-pin, 4mmx4mmx0.9mm plastic package with back side ground. The RF5824 operates from a single supply and will be easily incorporated into WLAN and other designs with minimal external components. Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT
n
0.90 0.10
4.00 0.10
Shaded area indicates pin 1.
-C-
0.400 0.100
2.44
SEATING PLANE
SCALE: NONE 2.44
0.10 M C
0.025 0.020
Dimensions in mm.
0.500 TYP
0.080 C
Package Style: QFN, 24-pin, 4mmx4mm
GaAs HBT SiGe HBT GaN HEMT
VREGLB PDETLB
GaAs MESFET Si CMOS SiGe Bi-CMOS
Features
* * * * * 5GHz Integrated Output Match 11a Current 155mA Typical 11g Current 120mA Typical Gain 27dB Typical for 11a and 11g EVM 3.5% TYP for 11g and 3.5% TYP for 11a (@ POUT 11a/g=17dBm)
VCC1LB
NC
NC
24
23
22
21
20
19
NC 1
1 Stage Bias
st
2 Stage Bias Pdetect Circuit_LB
nd
NC
18
RFOUT/ VCC2LB
RFINLB 2
Input Match
Interstage Match
17
RFOUT/ VCC2LB
GND 3
16 GND
* Single Supply Voltage 2.8V to 4.0V
GND 4
15 RFOUTHB
RFINHB 5
Input Match
Interstage Match
Interstage Match
Output Match
14 RFOUTHB
Ordering Information
RF5824 3.3V, Dual-Band WLAN Power Amplifier Module RF5824PCBA-41X Fully Assembled Evaluation Board
VREGHB 6
1 , 2 , and 3 Stage Bias
st
nd
rd
Pdetect Circuit_HB
13 VCC3HB
7 VCC1HB
8 GND
9 VCC2HB
10 NC
11 NC
12 PDETHB
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A0 061002
8-1
RF5824
Preliminary
Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information.
8-2
Rev A0 061002


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